DERIVATIVES OF SODIUM BORANOCARBONATE AS NOVEL CO-RELEASING MOLECULES (CO-RMS)




Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power.Source/drain ohmic contact is one of the key fabrication processes crucial to the device performance.Firstly, Au-contained metal stacks combined with RTA high-temperature ohmic contact sch

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